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The main IP address: 130.159.24.219,Your server United Kingdom,Glasgow ISP:University of Strathclyde TLD:uk CountryCode:GB
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This report updates in 16-Jun-2018
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Latitude: | 55.86515045166 |
Longitude: | -4.2576298713684 |
Country: | United Kingdom (GB) |
City: | Glasgow |
Region: | Scotland |
ISP: | University of Strathclyde |
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Date: | Sat, 16 Jun 2018 13:40:13 GMT |
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↓ javascript is disabled. please enable javascript on your browser to best view this site. semiconductor spectroscopy and devices search for: at the department of physics, university of strathclyde home people group members jobs / phd positions available collaborations history find us publications papers theses posters research areas iii-nitrides chalcopyrites for solar cells research grants techniques scanning electron microscopy cathodoluminescence x-ray microanalysis electron backscatter diffraction electron chanelling contrast imaging theory dftb nanophotonics facilities resources posters talks gallery crystallography crystal polytypes crystallographic calculator home the semiconductor spectroscopy and devices research group is part of the nanoscience division of the department of physics at the university of strathclyde . the department is a member of the scottish universities physics alliance ( supa ). research interests semiconductor materials issues, including: group iii nitrides : aln, gan, inn and their alloys materials doped with rare earth ions such as eu 3+ , er 3+ and tb 3+ chalcopyrites and kesterites for solar cells, such as cu(in,ga)(s,se) 2 and czts spatially and spectrally resolved optical luminescence characterisation, including: photoluminescence spectroscopy cathodoluminescence spectroscopy and hyperspectral imaging electroluminescence hyperspectral imaging advanced scanning electron microscopy techniques, including: electron backscatter diffraction electron channelling contrast imaging electron beam induced current wavelength and energy-dispersive x-ray spectroscopy theoretical studies, including: optical properties of plasmonic nanostructures modelling of condensed matter group news may 2018: lucia spasevski’s image “ultraviolet lace” is runner-up in jeol’s 2018 sem/tem/epma image contest february 2018: our paper analysis of doping concentration and composition in wide bandgap algan:si by wavelength dispersive x-ray spectroscopy is selected by semiconductor science and technology as one of their highlights of 2017 august 2017: elena pascal was jointly awarded the corbett prize at the 29th icds conference, matsue, japan. july 2017: the group was well represented at the icns-12 conference in strasbourg, presenting invited and contributed talks and several posters . july 2017: our new jeol jxa-8530f field-emission electron probe microanalyser (epma) is now up and running. join us! jobs / phd studentships available funded phd studentships latest publications a complete list of our papers can be found here . a. k. singh, k. p. o’donnell, p. r. edwards, k. lorenz, j. h. leach, and m. boćkowski, “eu-mg defects and donor-acceptor pairs in gan : photodissociation and the excitation transfer problem,” journal of physics d: applied physics , vol. 51, p. 65106, 2018. p. coulon, g. kusch, e. l. d. boulbar, p. chausse, c. bryce, r. w. martin, and p. a. shields, “hybrid top-down/bottom-up fabrication of regular arrays of aln nanorods for deep-uv core-shell leds,” physica status solidi (b) basic research , vol. 255, iss. 5, p. 1700445, 2018. i. e. svitsiankou, v. n. pavlovskii, e. v. lutsenko, g. p. yablonskii, a. v. mudryi, o. m. borodavchenko, v. d. zhivulko, m. v. yakushev, and r. martin, “stimulated emission and optical properties of solid solutions of cu(in,ga)se₂ direct band gap semiconductors,” journal of applied spectroscopy , vol. 85, iss. 2, p. 267–273, 2018. p. r. edwards and r. w. martin, “corrigendum: “cathodoluminescence nano-characterization of semiconductors” (2011 semicond. sci. technol. 26 064005),” semiconductor science and technology , vol. 33, p. 79501, 2018. b. hourahine, d. mcarthur, and f. papoff, “principal modes of maxwell’s equations,” in the generalized multipole technique for light scattering , t. wriedt and y. eremin, eds., berlin: springer international publishing ag, 2018. gallium nitride news nxp releases gan rf power products for 5g new gan fet driver provides better accuracy and improved resolution gallium nitride (gan) power amplifier for electronic warfare (ew) and radar offered by comtech pst bluglass raises aus$2m after completing share purchase plan global gallium nitride (gan) substrates market 2018 -2023 sales,revenue, price,gross margin,product type … older posts powered by google news ©2018 - semiconductor spectroscopy and devices - weaver xtreme theme ↑
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No such domain ac.uk
REFERRER http://www.nominet.org.uk
REGISTRAR Nominet UK
SERVERS
SERVER ac.uk.whois-servers.net
ARGS ac.uk
PORT 43
TYPE domain
REGISTERED no
DOMAIN
NAME ac.uk
NSERVER
NS2.JA.NET 193.63.105.17
NS0.JA.NET 128.86.1.20
AUTH03.NS.UU.NET 198.6.1.83
NS1.SURFNET.NL 192.87.106.101
NS3.JA.NET 193.63.106.103
NS4.JA.NET 193.62.157.66
WS-FRA1.WIN-IP.DFN.DE 193.174.75.178
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